Title :
High performance of AlGaInP/GaInP visible lasers by strain induced effects
Author :
Hashimoto, Jun ; Katsuyama, Tomokazu ; Shinka, J. ; Yoshida, Isao ; Hayashi, H.
Author_Institution :
Optoelectron. R&D Lab., Sumitomo Electr. Ind. Ltd., Yokohama, Japan
Abstract :
An AlGaInP/GaInP visible strained single quantum well (SSQW) laser has been investigated. In comparison with a conventional lattice-matched single quantum well (SQW) laser, it was found that a 25% increase in the differential gain coefficient beta and 60% decrease in the transparency current density J0 have been obtained by incorporating 0.65% compressive SSQW active layer structure.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; semiconductor junction lasers; semiconductor quantum wells; AlGaInP-GaInP; SSQW; compressive active layer structure; differential gain coefficient; semiconductors; strain induced effects; strained single quantum well laser; transparency current density; visible lasers;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19911256
