Title :
High power 980 nm ridge waveguide lasers with etch-stop layer
Author :
Elman, B. ; Sharfin, W.F. ; Rideout, W.C. ; LaCourse, J. ; Lauer, R.B.
Author_Institution :
GTE Lab. Inc., Waltham, MA, USA
Abstract :
For the first time, the use of an etch-stop layer to precisely control the mesa height in ridge waveguide InGaAs/GaAs lasers is reported. These 980 nm devices emit up to 180 mW of total power in the fundamental spatial mode and lase in a single frequency with sidemode suppression ratios of greater than 25 dB.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; semiconductor junction lasers; 180 mW; 980 nm; etch-stop layer; fundamental spatial mode; ridge waveguide lasers; semiconductors; sidemode suppression ratios;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19911258
