DocumentCode :
1088849
Title :
dV/dt Breakdown in power MOSFET´s
Author :
Kuo, D.-S. ; Hu, C. ; Chi, M.H.
Author_Institution :
University of California, Berkeley, CA
Volume :
4
Issue :
1
fYear :
1983
fDate :
1/1/1983 12:00:00 AM
Firstpage :
1
Lastpage :
2
Abstract :
A model for 
breakdown in power MOSFET\´s is proposed. This model allows quantitative analysis of limitation in power MOSFET circuits. Experimental results show good agreement with theoretical predictions.
breakdown in power MOSFET\´s is proposed. This model allows quantitative analysis of limitation in power MOSFET circuits. Experimental results show good agreement with theoretical predictions.Keywords :
Circuit testing; DVD; Electric breakdown; Equations; Immune system; MOSFET circuits; Power MOSFET; Semiconductor process modeling; Switching circuits; Switching loss;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/EDL.1983.25623
Filename :
1483367
Link To Document :
