• DocumentCode
    1088864
  • Title

    Selectively-doped Al0.48In0.52As/Ga0.47In0.53As heterostructure field effect transistor

  • Author

    Pearsall, T.P. ; Hendel, R. ; O´Connor, P. ; Alavi, K. ; Cho, A.Y.

  • Author_Institution
    Bell Laboratories, Murray Hill, NJ
  • Volume
    4
  • Issue
    1
  • fYear
    1983
  • fDate
    1/1/1983 12:00:00 AM
  • Firstpage
    5
  • Lastpage
    8
  • Abstract
    Selectively-doped depletion-mode FET´s which show full pinch-off at 295 K with transconductance in excess of 90 mS/mm and contact resistance less than 0.4 Ω-mm have been fabricated. The device properties reported represent a significant improvement over previously published work on an equivalent structure, because of improvements in growth technique and modifications in the device structure. Analysis of our measurement at room temperature suggests that the two-dimensional electron gas at the hetero-interface is not the dominant contributor to the total device current.
  • Keywords
    Buffer layers; Conductivity; Contact resistance; Current measurement; Doping; Electrical resistance measurement; Electron mobility; Indium phosphide; Leakage current; Milling;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1983.25625
  • Filename
    1483369
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1088864