Polarization dependence of linewidth enhancement factor in InGaAs/InGaAsP MQW material

Author

Jepsen, Kim S. ; Storkfelt, Niels ; Vaa, Michael ; Stubkjaer, Kristian E.

Author_Institution

Center for Broadband Telecommun., Tech. Univ. Denmark, Lyngby, Denmark

Volume

30

Issue

3

fYear

1994

fDate

3/1/1994 12:00:00 AM

Firstpage

635

Lastpage

639

Abstract

Measurements and calculations on the differential gain, the differential refractive index, and the linewidth enhancement factor have been performed for unstrained quantum-well (QW) material. The differential refractive index is considerably lower for the transverse magnetic (TM) polarization than for the transverse electric (TE) polarization, which is ascribed to absence of the plasma effect for the TM polarization. This has implications for the linewidth enhancement factor and thus linewidth and chirp in QW lasers

Keywords

III-V semiconductors; gallium arsenide; indium compounds; light polarisation; refractive index; semiconductor lasers; spectral line breadth; InGaAs-InGaAsP; InGaAs/InGaAsP MQW material; QW laser chirp; QW laser linewidth; TE polarization; TM polarization; differential gain; differential refractive index; linewidth enhancement factor; plasma effect; polarization dependence; quantum well lasers; semiconductor optical amplifier; transverse electric polarization; transverse magnetic polarization; unstrained quantum-well material; Gain measurement; Magnetic materials; Optical materials; Performance evaluation; Performance gain; Plasma materials processing; Polarization; Quantum wells; Refractive index; Tellurium;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.286149

Filename

286149