DocumentCode :
1088876
Title :
Geometry-Dependent Quality Factors in Ba0.5Sr0.5TiO3 Parallel-Plate Capacitors
Author :
Pervez, Nadia K. ; York, Robert A.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA
Volume :
55
Issue :
2
fYear :
2007
Firstpage :
410
Lastpage :
417
Abstract :
Quality factor variation with top electrode area in thin-film barium-strontium-titanate parallel-plate capacitors is discussed. At low frequencies, the geometry dependence is consistent with the presence of a parallel parasitic loss pathway enabled by conduction over the device mesa surface. At high frequencies, the variation in the quality factor with top electrode area is due to a geometry-independent series resistance
Keywords :
Q-factor; barium alloys; strontium alloys; thin film capacitors; titanium alloys; (BaSr)TiO3; geometry scaling; geometry-dependent quality factors; geometry-independent series resistance; parallel parasitic loss pathway; parallel-plate capacitors; top electrode area; Binary search trees; Capacitors; Electrodes; Equivalent circuits; Frequency; Geometry; Microwave devices; Probes; Q factor; Strontium; Geometry scaling; high- $k$; parallel-plate capacitor; quality factor;
fLanguage :
English
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9480
Type :
jour
DOI :
10.1109/TMTT.2006.889347
Filename :
4084844
Link To Document :
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