Title :
Polarization dependence of optoelectronic properties in quantum dots and quantum wires-consequences of valence-band mixing
Author :
Willatzen, M. ; Tanaka, T. ; Arakawa, Yasuhiko ; Singh, J.
Author_Institution :
TFL Telecommun. Res. Lab., Horsholm, Denmark
fDate :
3/1/1994 12:00:00 AM
Abstract :
The electronic bandstructure in quantum dots and quantum wires is studied, including the valence-band mixing effects. Based on the bandstructure, results for the polarization dependence of absorption and gain (at room temperature) are examined. The related differential gain and the α-parameter is also studied. Our results show that it is extremely important to include valence-band mixing effects in predicting the laser performance of such structures
Keywords :
band structure of crystalline semiconductors and insulators; laser theory; light polarisation; semiconductor lasers; semiconductor quantum dots; semiconductor quantum wires; valence bands; α-parameter; absorption; bandstructure; differential gain; electronic bandstructure; gain; laser performance; optoelectronic properties; polarization dependence; quantum dots; quantum well lasers; quantum wires; room temperature; semiconductor lasers; valence-band mixing; Absorption; Helium; Heterojunctions; Optical polarization; Quantum dots; Quantum well lasers; Semiconductor lasers; Temperature dependence; US Department of Transportation; Wire;
Journal_Title :
Quantum Electronics, IEEE Journal of
