Polarization dependence of optoelectronic properties in quantum dots and quantum wires-consequences of valence-band mixing

Author

Willatzen, M. ; Tanaka, T. ; Arakawa, Yasuhiko ; Singh, J.

Author_Institution

TFL Telecommun. Res. Lab., Horsholm, Denmark

Volume

30

Issue

3

fYear

1994

fDate

3/1/1994 12:00:00 AM

Firstpage

640

Lastpage

653

Abstract

The electronic bandstructure in quantum dots and quantum wires is studied, including the valence-band mixing effects. Based on the bandstructure, results for the polarization dependence of absorption and gain (at room temperature) are examined. The related differential gain and the α-parameter is also studied. Our results show that it is extremely important to include valence-band mixing effects in predicting the laser performance of such structures

Keywords

band structure of crystalline semiconductors and insulators; laser theory; light polarisation; semiconductor lasers; semiconductor quantum dots; semiconductor quantum wires; valence bands; α-parameter; absorption; bandstructure; differential gain; electronic bandstructure; gain; laser performance; optoelectronic properties; polarization dependence; quantum dots; quantum well lasers; quantum wires; room temperature; semiconductor lasers; valence-band mixing; Absorption; Helium; Heterojunctions; Optical polarization; Quantum dots; Quantum well lasers; Semiconductor lasers; Temperature dependence; US Department of Transportation; Wire;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.286150

Filename

286150