DocumentCode :
1088890
Title :
1/f noise in modulation-doped field effect transistors
Author :
Duh, K.H. ; van der Ziel, A. ; Morkoc, H.
Author_Institution :
University of Minnesota, Minneapolis, MN
Volume :
4
Issue :
1
fYear :
1983
fDate :
1/1/1983 12:00:00 AM
Firstpage :
12
Lastpage :
13
Abstract :
Low frequency noise measurements are reported in modulation-doped GaAs field effect transistors. The noise spectrum is 
and is relatively large. At a given frequency the equivalent saturated diode current Ieq varies as V2 , as expected for a fluctuating resistor, and saturates when the characteristic saturates.
and is relatively large. At a given frequency the equivalent saturated diode current IKeywords :
Diodes; Epitaxial layers; FETs; Frequency measurement; Gallium arsenide; HEMTs; Low-frequency noise; MODFETs; Noise measurement; Resistors;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/EDL.1983.25628
Filename :
1483372
Link To Document :
