• DocumentCode
    1088923
  • Title

    An in situ Tunable Diode Mounting Topology for High-Power X-Band Waveguide Switches

  • Author

    Sickel, Thomas ; Meyer, Petrie ; van der Walt, P.W.

  • Author_Institution
    Dept. of Electr. & Electron. Eng., Stellenbosch Univ.
  • Volume
    55
  • Issue
    2
  • fYear
    2007
  • Firstpage
    281
  • Lastpage
    286
  • Abstract
    An in situ tunable diode mounting topology for waveguide switches is presented and utilized to design and fabricate two evanescent-mode X-band switching modules of approximately 15% and 25% fractional bandwidth. The ability of the mounting topology to operate in a high-power environment is verified in an evanescent-mode X-band switch using six packaged p-i-n diodes, successfully reflecting 4 kW of pulsed power
  • Keywords
    microwave switches; mountings; p-i-n diodes; waveguide components; 4 kW; X-band waveguide switches; evanescent-mode X-band switch; high-power waveguide switches; p-i-n diodes; tunable diode mounting topology; Africa; Bandwidth; Capacitance; Coaxial components; Inductance; Insertion loss; P-i-n diodes; Resonance; Switches; Topology; $X$-band; Diode mount; evanescent mode; high power; p-i-n diodes; waveguide switch;
  • fLanguage
    English
  • Journal_Title
    Microwave Theory and Techniques, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9480
  • Type

    jour

  • DOI
    10.1109/TMTT.2006.889146
  • Filename
    4084849
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1088923