Title :
A superluminescent diode at 1.3 μm with very low spectral modulation
Author :
Patterson, Bruce D. ; Epler, John E. ; Graf, Bruno ; Lehmann, Hans W. ; Sigg, Hans C.
Author_Institution :
Paul Scherrer Inst., Zurich, Switzerland
fDate :
3/1/1994 12:00:00 AM
Abstract :
An edge-emitting superluminescent diode has been fabricated from an MOCVD-grown InGaAsP/InP double heterostructure, for light emission at 1.3 μm. Using a ridge-waveguide geometry with an integrated absorber, the goals of high power coupled into a single-mode fiber and very low spectral modulation are fulfilled. Interferometric measurements of the residual modulation determine the location of internal optical reflections in the device. The results are interpreted and compared to the predictions of a transmission-line model
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; light emitting diodes; light interferometry; optical modulation; superradiance; 1.3 mum; InGaAsP active layer; InGaAsP-InP; InGaAsP/InP double heterostructure; MOCVD-grown; edge-emitting superluminescent diode; high power; integrated absorber; interferometric measurements; internal optical reflections; light emission; low spectral modulation; residual modulation; ridge-waveguide geometry; single-mode fiber; superluminescent diode; transmission-line model; very low spectral modulation; Coatings; Coherence; Indium phosphide; Optical coupling; Optical fiber devices; Optical interferometry; Optical modulation; Optical sensors; Optical waveguides; Superluminescent diodes;
Journal_Title :
Quantum Electronics, IEEE Journal of
