DocumentCode :
1088976
Title :
The influence of interface grading on threshold current density of (near) visible DH(Ga,Al)As lasers
Author :
Nijman, Willem ; Leswin, Willem J. ; Thijs, Peter
Author_Institution :
Philips Research Labs., Eindhoven, The Netherlands
Volume :
17
Issue :
5
fYear :
1981
fDate :
5/1/1981 12:00:00 AM
Firstpage :
767
Lastpage :
775
Abstract :
The effect of interface grading around the active layer in DH (Ga, Al) As near-visible lasers ( 
nm) has been investigated for Ge and Sn as p- and n-type dopants. The combination of graded transition layers with a rather high Al and Ge concentration gives rise to a high effective interface recombination velocity ( 
cm/s) due to carrier loss in the highly Ge-doped p-Ga0.55 Al0.45 As cladding layer. The chemical width 
of the transition layers is determined by SIMS and SAES and found to range between 50 and 2.5 nm. The latter extremely steep interfaces have been grown in a novel LPE growth system. The threshold current density and its temperature sensitivity, in terms of the exponential relationship 
improve significantly with abrupt junctions. From this material 5 μm proton-bombarded stripe lasers with a threshold current of ∼90 mA and a 
K at 780 nm have been fabricated.
nm) has been investigated for Ge and Sn as p- and n-type dopants. The combination of graded transition layers with a rather high Al and Ge concentration gives rise to a high effective interface recombination velocity ( cm/s) due to carrier loss in the highly Ge-doped p-Ga of the transition layers is determined by SIMS and SAES and found to range between 50 and 2.5 nm. The latter extremely steep interfaces have been grown in a novel LPE growth system. The threshold current density and its temperature sensitivity, in terms of the exponential relationship improve significantly with abrupt junctions. From this material 5 μm proton-bombarded stripe lasers with a threshold current of ∼90 mA and a K at 780 nm have been fabricated.Keywords :
Gallium materials/lasers; Semiconductor device doping; Biographies; Heterojunctions; Laser transitions; Lasers and electrooptics; Optical recording; Semiconductor lasers; Temperature distribution; Temperature sensors; Threshold current; Tin;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/JQE.1981.1071172
Filename :
1071172
Link To Document :
