DocumentCode
1088984
Title
Improvement in operation lives of GaAlAs visible lasers by introducing GaAlAs buffer layers
Author
Shimizu, Hirokazu ; Itoh, Kunio ; Wada, Masaru ; Sugino, Takashi ; Teramoto, Iwao
Author_Institution
Matsushita Electronics Corporation, Takatsuki, Osaka, Japan
Volume
17
Issue
5
fYear
1981
fDate
5/1/1981 12:00:00 AM
Firstpage
763
Lastpage
767
Abstract
It is shown that drastic reduction of the active-layer stress can be obtained by the introduction of a GaAlAs buffer layer in GaAlAs visible lasers. The life tests of the GaAlAs visible lasers with the optimally designed buffer layers were carried out at 50°C in a dry nitrogen ambient. The results indicate that the introduction of the optimal buffer layer leads to a reduction in the stress induced degradation of GaAlAs visible lasers.
Keywords
Gallium materials/lasers; Semiconductor device reliability; Visible lasers; Buffer layers; Degradation; Internal stresses; Laser theory; Life testing; Residual stresses; Substrates; Temperature; Thermal expansion; Thermal stresses;
fLanguage
English
Journal_Title
Quantum Electronics, IEEE Journal of
Publisher
ieee
ISSN
0018-9197
Type
jour
DOI
10.1109/JQE.1981.1071173
Filename
1071173
Link To Document