• DocumentCode
    1088984
  • Title

    Improvement in operation lives of GaAlAs visible lasers by introducing GaAlAs buffer layers

  • Author

    Shimizu, Hirokazu ; Itoh, Kunio ; Wada, Masaru ; Sugino, Takashi ; Teramoto, Iwao

  • Author_Institution
    Matsushita Electronics Corporation, Takatsuki, Osaka, Japan
  • Volume
    17
  • Issue
    5
  • fYear
    1981
  • fDate
    5/1/1981 12:00:00 AM
  • Firstpage
    763
  • Lastpage
    767
  • Abstract
    It is shown that drastic reduction of the active-layer stress can be obtained by the introduction of a GaAlAs buffer layer in GaAlAs visible lasers. The life tests of the GaAlAs visible lasers with the optimally designed buffer layers were carried out at 50°C in a dry nitrogen ambient. The results indicate that the introduction of the optimal buffer layer leads to a reduction in the stress induced degradation of GaAlAs visible lasers.
  • Keywords
    Gallium materials/lasers; Semiconductor device reliability; Visible lasers; Buffer layers; Degradation; Internal stresses; Laser theory; Life testing; Residual stresses; Substrates; Temperature; Thermal expansion; Thermal stresses;
  • fLanguage
    English
  • Journal_Title
    Quantum Electronics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9197
  • Type

    jour

  • DOI
    10.1109/JQE.1981.1071173
  • Filename
    1071173