DocumentCode :
1088984
Title :
Improvement in operation lives of GaAlAs visible lasers by introducing GaAlAs buffer layers
Author :
Shimizu, Hirokazu ; Itoh, Kunio ; Wada, Masaru ; Sugino, Takashi ; Teramoto, Iwao
Author_Institution :
Matsushita Electronics Corporation, Takatsuki, Osaka, Japan
Volume :
17
Issue :
5
fYear :
1981
fDate :
5/1/1981 12:00:00 AM
Firstpage :
763
Lastpage :
767
Abstract :
It is shown that drastic reduction of the active-layer stress can be obtained by the introduction of a GaAlAs buffer layer in GaAlAs visible lasers. The life tests of the GaAlAs visible lasers with the optimally designed buffer layers were carried out at 50°C in a dry nitrogen ambient. The results indicate that the introduction of the optimal buffer layer leads to a reduction in the stress induced degradation of GaAlAs visible lasers.
Keywords :
Gallium materials/lasers; Semiconductor device reliability; Visible lasers; Buffer layers; Degradation; Internal stresses; Laser theory; Life testing; Residual stresses; Substrates; Temperature; Thermal expansion; Thermal stresses;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/JQE.1981.1071173
Filename :
1071173
Link To Document :
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