DocumentCode
1088994
Title
Stationary and transient thermal properties of semiconductor laser diodes
Author
Ito, Minoru ; Kimura, Tatsuya
Author_Institution
Nippon Telegraph and Telephone Public Corp., Musashino-shi, Tokyo, Japan
Volume
17
Issue
5
fYear
1981
fDate
5/1/1981 12:00:00 AM
Firstpage
787
Lastpage
795
Abstract
Numerical analyses and experimental results on thermal behavior of AlGaAs laser diodes for CW and modulated operations are presented. Theoretical stationary and transient temperature rises are calculated using Fourier and Laplace transformations. Effects of inhomogeneous heat flow to a submount and heat radiation from the diode surface into the ambient atmosphere are taken into account in the calculation. Thermal resistances of laser arrays are also discussed. Experimental temperature behavior at the active layer is obtained from the wavelength shift measurement of an oscillation mode using a birefringent filter, which provides fast and precise measurement. Three components of temperature rise are observed in step and periodic responses. Numerical and experimental results are in good agreement.
Keywords
Gallium materials/lasers; Laser thermal factors; Semiconductor device thermal factors; Atmosphere; Atmospheric measurements; Diode lasers; Electrical resistance measurement; Laser modes; Numerical analysis; Semiconductor diodes; Temperature; Thermal resistance; Wavelength measurement;
fLanguage
English
Journal_Title
Quantum Electronics, IEEE Journal of
Publisher
ieee
ISSN
0018-9197
Type
jour
DOI
10.1109/JQE.1981.1071174
Filename
1071174
Link To Document