• DocumentCode
    1088999
  • Title

    Laser chemical etching of vias in GaAs

  • Author

    Tucker, A.W. ; Birnbaum, M.

  • Author_Institution
    The Aerospace Corporation, Los Angeles, CA
  • Volume
    4
  • Issue
    2
  • fYear
    1983
  • fDate
    2/1/1983 12:00:00 AM
  • Firstpage
    39
  • Lastpage
    41
  • Abstract
    Rapid drilling of vias in thick wafers (381 µm) of GaAs has been achieved by a laser assisted etching process. The technique utilized a cw visible argon ion laser and an etchant gas of low pressure Cl2. Data on the dependence of the etch rate on the laser power, wavelength, and Cl2gas pressure are presented.
  • Keywords
    Argon; Chemical lasers; Drilling; Etching; Gallium arsenide; Gas lasers; Laser beams; Masers; Power lasers; Semiconductor lasers;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1983.25639
  • Filename
    1483383
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1088999