DocumentCode :
1089012
Title :
Very low threshold visible TS lasers
Author :
Wada, Masaru ; Itoh, Kunio ; Shimizu, Hirokazu ; Sugino, Takashi ; Teramoto, I.
Author_Institution :
Semiconductor Laboratory, Matsushita Electronics Corporation, Takatsuki, Osaka, Japan
Volume :
17
Issue :
5
fYear :
1981
fDate :
5/1/1981 12:00:00 AM
Firstpage :
776
Lastpage :
780
Abstract :
Fundamental transverse mode lasers with very low threshold currents have been realized by use of the modified terraced substrate (TS) geometry. The threshold currents of 250 μm cavity length lasers at room temperature are typically 20-30 mA for wavelengths around 750 nm. In the 710 nm laser, which is the shortest lasing wavelength in this work, the threshold is as low as 70 mA in CW operation. The 726 nm laser was operated for only 150 h, while a lifetime longer than 10 000 h is expected for TS lasers with a lasing wavelength longer than 750 nm.
Keywords :
Gallium materials/lasers; Visible lasers; Chemical lasers; Geometrical optics; Laser modes; Optical device fabrication; Refractive index; Semiconductor lasers; Stress; Substrates; Temperature; Threshold current;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/JQE.1981.1071176
Filename :
1071176
Link To Document :
بازگشت