DocumentCode
1089073
Title
Channeling effect of low energy boron implant in
Author
Liu, T.M. ; Oldham, W.G. ; Oldham, W.G.
Author_Institution
University of California, Berkeley, CA
Volume
4
Issue
3
fYear
1983
fDate
3/1/1983 12:00:00 AM
Firstpage
59
Lastpage
62
Abstract
Unintentional ion channeling in low energy ion implantation of boron into
Keywords
Amorphous materials; Annealing; Boron; CMOS technology; Capacitance-voltage characteristics; Crystallization; Implants; Silicon; Tail; Very large scale integration;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/EDL.1983.25647
Filename
1483391
Link To Document