Title :
Channeling effect of low energy boron implant in
Author :
Liu, T.M. ; Oldham, W.G. ; Oldham, W.G.
Author_Institution :
University of California, Berkeley, CA
fDate :
3/1/1983 12:00:00 AM
Abstract :
Unintentional ion channeling in low energy ion implantation of boron into
Keywords :
Amorphous materials; Annealing; Boron; CMOS technology; Capacitance-voltage characteristics; Crystallization; Implants; Silicon; Tail; Very large scale integration;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1983.25647
