DocumentCode

1089083

Title

Comments on "Mobility degradation due to the gate field in the inversion layer of MOSFET\´s"

Author

Schütz, A.

Author_Institution

Technische Universitat Wien, Vienna, Austria

Volume

4

Issue

3

fYear

1983

fDate

3/1/1983 12:00:00 AM

Firstpage

62

Lastpage

62

Keywords

Charge carrier processes; Degradation; Electron devices; Electron mobility; Energy conservation; Heating; MOSFET circuits; Power supplies; Voltage;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/EDL.1983.25648

Filename

1483392