• DocumentCode
    1089164
  • Title

    Application of thermal pulse annealing to ion-implanted GaAlAs/GaAs heterojunction bipolar transistors

  • Author

    Asbeck, P.M. ; Miller, D.L. ; Babcock, E.J. ; Kirkpatrick, C.G.

  • Author_Institution
    Rockwell International, Microelectronics Research and Development Center, Thousand Oaks, CA
  • Volume
    4
  • Issue
    4
  • fYear
    1983
  • fDate
    4/1/1983 12:00:00 AM
  • Firstpage
    81
  • Lastpage
    84
  • Abstract
    Post-implant anneals of short (10-15 s) duration are compared with extended (10 min) furnace anneals for the fabrication of Be-implanted MBE-grown GaAlAs/GaAs heterojunction bipolar transistors. It is shown that the thermal pulse anneals can lead to improved Be-implant electrical activation in Ga0.7Al0.3As and GaAs, to improved contact resistance to Be-implanted GaAs, and to improved transistor characteristics. The transistor improvement is inferred to be due to a reduction in diffusion of the grown-in dopant profile.
  • Keywords
    Annealing; Contact resistance; Fabrication; Furnaces; Gallium arsenide; Heterojunction bipolar transistors; Implants; Molecular beam epitaxial growth; Plasma measurements; Plasma temperature;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1983.25656
  • Filename
    1483400
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1089164