DocumentCode :
108917
Title :
Nitride-Based Blue Light-Emitting Diodes Grown With InN/GaN Matrix Quantum Wells
Author :
Cheng-Huang Kuo ; Yi Keng Fu ; Chang, L.C. ; Yu An Chen
Author_Institution :
Inst. of Lighting & Energy Photonics, Nat. Chiao Tung Univ., Tainan, Taiwan
Volume :
50
Issue :
4
fYear :
2014
fDate :
Apr-14
Firstpage :
255
Lastpage :
260
Abstract :
Nitride-based light-emitting diodes (LEDs) grown with a structure of InN/GaN matrix quantum-wells (QWs) using metal-organic chemical vapor deposition are fabricated and characterized. The InN/GaN matrix QWs can significantly enhance the formation of phase-separated In-rich regions. Under an injection current of 500 A/cm2, the LED output power can be enhanced by 26%, and the efficiency droop can be improved as compared with a conventional LED. These improvements could be attributed to the strong localization effect to remove carriers from the confining potential and capture these carriers at nonradiative centers in the active layer.
Keywords :
III-V semiconductors; MOCVD; gallium compounds; indium compounds; light emitting diodes; optical materials; semiconductor quantum wells; InN-GaN; InN/GaN matrix QW; InN/GaN matrix quantum-well structure; LED output power; active layer; carrier removal; conventional LED; efficiency droop; injection current; metal-organic chemical vapor deposition; nitride-based light-emitting diodes; nonradiative centers; phase-separated in-rich region formation; strong localization effect; Gallium nitride; Indium; Light emitting diodes; Power generation; Quantum wells; Strain; In rich; InN/GaN; efficiency droop; localization effect;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/JQE.2014.2306997
Filename :
6746061
Link To Document :
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