Nitride-Based Blue Light-Emitting Diodes Grown With InN/GaN Matrix Quantum Wells

Author

Cheng-Huang Kuo ; Yi Keng Fu ; Chang, L.C. ; Yu An Chen

Author_Institution

Inst. of Lighting & Energy Photonics, Nat. Chiao Tung Univ., Tainan, Taiwan

Volume

50

Issue

4

fYear

2014

fDate

Apr-14

Firstpage

255

Lastpage

260

Abstract

Nitride-based light-emitting diodes (LEDs) grown with a structure of InN/GaN matrix quantum-wells (QWs) using metal-organic chemical vapor deposition are fabricated and characterized. The InN/GaN matrix QWs can significantly enhance the formation of phase-separated In-rich regions. Under an injection current of 500 A/cm², the LED output power can be enhanced by 26%, and the efficiency droop can be improved as compared with a conventional LED. These improvements could be attributed to the strong localization effect to remove carriers from the confining potential and capture these carriers at nonradiative centers in the active layer.

Keywords

III-V semiconductors; MOCVD; gallium compounds; indium compounds; light emitting diodes; optical materials; semiconductor quantum wells; InN-GaN; InN/GaN matrix QW; InN/GaN matrix quantum-well structure; LED output power; active layer; carrier removal; conventional LED; efficiency droop; injection current; metal-organic chemical vapor deposition; nitride-based light-emitting diodes; nonradiative centers; phase-separated in-rich region formation; strong localization effect; Gallium nitride; Indium; Light emitting diodes; Power generation; Quantum wells; Strain; In rich; InN/GaN; efficiency droop; localization effect;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/JQE.2014.2306997

Filename

6746061