Title :
Gain suppression in GaAs/AlGaAs TJS lasers
Author :
Kawanishi, H. ; Petersen, P.E.
Author_Institution :
Tokyo Institute of Technology, Tokyo, Japan
fDate :
6/1/1981 12:00:00 AM
Abstract :
Experimental results on gain suppression in transverse junetion stripe (TJS) lasers with a heavily doped active region is reported for the first time. These lasers oscillate in the fundamental transverse and lateral modes with gain suppression, and reproducibly operate in a single-longitudinal mode up to 1.8 times the threshold current.
Keywords :
Gallium materials/lasers; Annealing; Gallium arsenide; Laser modes; Laser theory; Molecular beam epitaxial growth; Optical pulses; Power lasers; Temperature; Threshold current; Zinc;
Journal_Title :
Quantum Electronics, IEEE Journal of
DOI :
10.1109/JQE.1981.1071195
