Title :
Ballistic transport in Schottky barrier carbon nanotube FETs
Author :
Ossaimee, M.I. ; Gamal, S.H. ; Kirah, K.A. ; Omar, O.A.
Author_Institution :
Ain Shams Univ., Cairo
Abstract :
Simulation of Schottky barrier carbon nanotube field effect transistors (SB-CNTFETs) is presented to yield the electrostatic potential, carrier concentration and current within the device. The simulator is based on a self-consistent solution of Poisson´s equation and the carrier transport equation. The finite element method is used for solving Poisson´s equation while the non-equilibrium Green´s function formalism is used to model the carrier transport. The developed simulator is used to investigate the effects of device parameters on device performance.
Keywords :
Green´s function methods; Poisson equation; Schottky barriers; Schottky gate field effect transistors; ballistic transport; carbon nanotubes; electrostatics; finite element analysis; Poisson´s equation; Schottky barrier carbon nanotube FET; ballistic transport; carrier transport equation; electrostatic potential; field effect transistors; finite element method; nonequilibrium Green´s function;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20080241
