Title :
Electrical characterization of the polycide sidewall profile
Author :
Neppl, F. ; Schwabe, U.
Author_Institution :
Siemens Research Laboratories, Munich, Germany
fDate :
4/1/1983 12:00:00 AM
Abstract :
An electrical method for characterizing the polycide (i.e., silicide on top of poly-Si) side wall profile is presented. It is based on resistance and effective channel length measurements. The electrical character of the method makes it particularly applicable for process control of the polycide side wall profile, which critically determines the electrical characteristics of short channel MOS devices. Automation of measurements and evaluation is possible.
Keywords :
Electric resistance; Electric variables; Electrical resistance measurement; Etching; Length measurement; Logic circuits; MOS devices; Process control; Silicides; Thermal resistance;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1983.25660
