DocumentCode
1089208
Title
Electrical characterization of the polycide sidewall profile
Author
Neppl, F. ; Schwabe, U.
Author_Institution
Siemens Research Laboratories, Munich, Germany
Volume
4
Issue
4
fYear
1983
fDate
4/1/1983 12:00:00 AM
Firstpage
92
Lastpage
94
Abstract
An electrical method for characterizing the polycide (i.e., silicide on top of poly-Si) side wall profile is presented. It is based on resistance and effective channel length measurements. The electrical character of the method makes it particularly applicable for process control of the polycide side wall profile, which critically determines the electrical characteristics of short channel MOS devices. Automation of measurements and evaluation is possible.
Keywords
Electric resistance; Electric variables; Electrical resistance measurement; Etching; Length measurement; Logic circuits; MOS devices; Process control; Silicides; Thermal resistance;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/EDL.1983.25660
Filename
1483404
Link To Document