Title :
APEC Guides Engineers to Latest Advances in Power Devices, Components, and Packaging: High-voltage gallium nitride transistors and the new generation of digital controllers
Abstract :
Continuing its long-standing tradition of addressing issues of immediate and long-term interest to practicing power electronics engineers, the IEEE Applied Power Electronics Conference and Exposition (APEC) celebrated its 30th anniversary this year in Charlotte, North Carolina, 15-19 March. While many advances and innovations in areas ranging from power semiconductor devices to circuit components and packaging were presented, two key trends took center stage: the availability of high-voltage gallium nitride (GaN) transistors with improved reliability, among other widebandgap devices, and the new generation of digital controllers for smooth transition from analog to digital power management in dc-dc and ac-dc power converters. In addition, the Power Sources Manufacturers Association (PSMA) presented its technology report on three-dimensional (3-D) power packaging with a focus on embedded substrate technologies.
Keywords :
AC-DC power convertors; DC-DC power convertors; IEEE standards; III-V semiconductors; gallium compounds; power transistors; semiconductor device packaging; semiconductor device reliability; wide band gap semiconductors; 3D power packaging; APEC; GaN; IEEE Applied Power Electronics Conference and Exposition; PSMA; Power Sources Manufacturers Association; ac-dc power converters; analog to digital power management; circuit components; dc-dc power converters; digital controllers; embedded substrate technologies; high-voltage transistors; power devices; power electronics engineers; power semiconductor devices; reliability improvement; three-dimensional power packaging; wide bandgap devices; Gallium nitride; HEMTs; Inverters; MODFETs; Silicon carbide;
Journal_Title :
Power Electronics Magazine, IEEE
DOI :
10.1109/MPEL.2015.2422271
