Title :
18.5 GHz bandwidth monolithic preamplifier using AlGaAs/GaAs ballistic collection transistors
Author :
Sano, Eiichi ; Nakamura, Mitsutoshi ; Imai, Yuki ; Matsuoka, Yasutaka ; Ishibashi, Takayuki
Author_Institution :
NTT LSI Lab., Atsugi, Japan
Abstract :
A circuit technique for improving the transimpedance flatness and output matching characteristics in a preamplifier is proposed. An 18.5 GHz bandwidth monolithic preamplifier with a transimpedance of 52 dB Omega has been fabricated with AlGaAs/GaAs ballistic collection transistors.
Keywords :
III-V semiconductors; MMIC; aluminium compounds; bipolar integrated circuits; gallium arsenide; impedance matching; microwave amplifiers; optical communication equipment; preamplifiers; wideband amplifiers; 18.5 GHz; AlGaAs-GaAs; BCT; ballistic collection transistors; monolithic preamplifier; output matching characteristics; transimpedance flatness;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19911296
