Title :
Improvement in very thin gate oxide integrity by ion implantation
Author_Institution :
Texas Instruments, Houston, TX
fDate :
4/1/1983 12:00:00 AM
Abstract :
It has been found that implanting silicon substrates prior to oxidation considerably improves the quality of very thin gate oxides (70 Å). Data is presented on leakage characteristics and breakdown distributions of these oxides.
Keywords :
Capacitors; Circuits; Electric breakdown; Electron devices; Ion implantation; Oxidation; Silicides; Silicon; Testing; Tungsten;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1983.25661
