DocumentCode
1089241
Title
A sub-half-micron gate-length GaAs MESFET with new gate structure
Author
Imai, Y. ; Uchida, M. ; Yamamoto, K. ; Hirayama, M.
Author_Institution
Nippon Telegraph and Telephone Public Corporation, Musashinoshi, Tokyo, Japan
Volume
4
Issue
4
fYear
1983
fDate
4/1/1983 12:00:00 AM
Firstpage
99
Lastpage
101
Abstract
New gate structure and fabrication technique for GaAs MESFET´s have been developed. Utilizing the gate structure, sub-half-micron gate length can easily be obtained by conventional projection photolithography without any gate resistance increase and mechanical adhesion strength decrease.
Keywords
Fabrication; Gallium arsenide; Gold; Lithography; MESFETs; Monitoring; Resists; Silicon; Substrates; Thickness control;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/EDL.1983.25663
Filename
1483407
Link To Document