Title :
A sub-half-micron gate-length GaAs MESFET with new gate structure
Author :
Imai, Y. ; Uchida, M. ; Yamamoto, K. ; Hirayama, M.
Author_Institution :
Nippon Telegraph and Telephone Public Corporation, Musashinoshi, Tokyo, Japan
fDate :
4/1/1983 12:00:00 AM
Abstract :
New gate structure and fabrication technique for GaAs MESFET´s have been developed. Utilizing the gate structure, sub-half-micron gate length can easily be obtained by conventional projection photolithography without any gate resistance increase and mechanical adhesion strength decrease.
Keywords :
Fabrication; Gallium arsenide; Gold; Lithography; MESFETs; Monitoring; Resists; Silicon; Substrates; Thickness control;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1983.25663
