Title :
InGaAs/InP composite collector heterostructure bipolar transistors
Author :
Feygenson, A. ; Ritter, Daniel ; Hamm, R.A. ; Smith, Peter ; Montgomery, R.K. ; Yadvish, R.D. ; Temkin, H. ; Panish, M.B.
Author_Institution :
AT&T Bell Labs., Murray Hill, NJ, USA
fDate :
3/26/1992 12:00:00 AM
Abstract :
A high speed bipolar transistor with high breakdown voltage BVCEO is described. The structure uses a composite collector of InGaAs and InP. A common emitter gain of 65 is obtained with a base doping of 7*1019 cm-3 and a breakdown voltage in excess of 10 V. The fT=64 GHz was reached at a collector-emitter voltage of 2 V and a current density of 52 kA/cm2. The potential of this structure for very high speed applications is demonstrated by the extracted intrinsic transit time of 0.4 ps.
Keywords :
III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; indium compounds; solid-state microwave devices; 0.4 ps; 10 V; 64 GHz; InGaAs-InP; base doping; collector-emitter voltage; common emitter gain; composite collector HBT; current density; cutoff frequency; heterostructure bipolar transistors; high breakdown voltage; high speed bipolar transistor; intrinsic transit time; very high speed applications;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19920383
