DocumentCode
1089258
Title
6-10 GHz ultra-wideband CMOS LNA
Author
Battista, M. ; Gaubert, J. ; Egels, M. ; Bourdel, S. ; Barthélemy, H.
Author_Institution
Univ. de Provence, Marseille
Volume
44
Issue
5
fYear
2008
Firstpage
343
Lastpage
344
Abstract
A two-stage matched ultra-wideband CMOS low noise amplifier (LNA) is presented. The LNA is designed to achieve a low noise figure with high voltage gain. The LNA fabricated in a 0.13 μm CMOS process shows a 3.9 dB average noise figure with a 27 dB voltage gain in the 6-10 GHz frequency band with a power consumption of 14 mW.
Keywords
CMOS analogue integrated circuits; low noise amplifiers; frequency 6 GHz to 10 GHz; gain 27 dB; high voltage gain; low noise amplifier; low noise figure; noise figure 3.9 dB; power 14 mW; size 0.13 μm; ultra-wideband CMOS LNA;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:20082982
Filename
4460761
Link To Document