Title :
6-10 GHz ultra-wideband CMOS LNA
Author :
Battista, M. ; Gaubert, J. ; Egels, M. ; Bourdel, S. ; Barthélemy, H.
Author_Institution :
Univ. de Provence, Marseille
Abstract :
A two-stage matched ultra-wideband CMOS low noise amplifier (LNA) is presented. The LNA is designed to achieve a low noise figure with high voltage gain. The LNA fabricated in a 0.13 μm CMOS process shows a 3.9 dB average noise figure with a 27 dB voltage gain in the 6-10 GHz frequency band with a power consumption of 14 mW.
Keywords :
CMOS analogue integrated circuits; low noise amplifiers; frequency 6 GHz to 10 GHz; gain 27 dB; high voltage gain; low noise amplifier; low noise figure; noise figure 3.9 dB; power 14 mW; size 0.13 μm; ultra-wideband CMOS LNA;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20082982
