• DocumentCode
    1089266
  • Title

    Indium phosphide accumulation-mode field-effect transistors

  • Author

    Wieder, H.H.

  • Author_Institution
    University of California, San Diego, California
  • Volume
    4
  • Issue
    4
  • fYear
    1983
  • fDate
    4/1/1983 12:00:00 AM
  • Firstpage
    108
  • Lastpage
    110
  • Abstract
    Enhancement-type insulated gate field-effect transistors made of semi-insulating InP depend on the surface accumulation of electrons induced by a positive gate voltage and an equilibrium surface potential whose sign and magnitude are considered to be functions of the difference between charged surface donor and occupied acceptor states.
  • Keywords
    Contacts; Dielectric substrates; Electrons; FETs; Indium phosphide; Insulation; MISFETs; Metal-insulator structures; Predictive models; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1983.25666
  • Filename
    1483410
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1089266