DocumentCode
1089268
Title
Strained InGaAsP multiquantum wells for optical electroabsorption waveguide modulators
Author
Sato, K. ; Wakita, K. ; Yamamoto, M.
Volume
28
Issue
7
fYear
1992
fDate
3/26/1992 12:00:00 AM
Firstpage
609
Lastpage
610
Abstract
The quantum-confined Stark effect in strained InGaAsP multiquantum wells with InGaAsP barriers and its application to the optical electroabsorption waveguide modulator are described. A large spectral red shift of more than 450 AA is observed at a low applied voltage of 3 V. An extinction ratio of >14 dB is demonstrated with a driving voltage as low as 5 V.
Keywords
III-V semiconductors; Stark effect; electro-optical devices; electroabsorption; gallium arsenide; gallium compounds; indium compounds; integrated optics; optical modulation; optical waveguide components; semiconductor quantum wells; spectral line shift; driving voltage; extinction ratio; optical electroabsorption waveguide modulators; quantum-confined Stark effect; spectral red shift; strained InGaAsP multiquantum wells;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19920384
Filename
133021
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