Title :
Strained InGaAsP multiquantum wells for optical electroabsorption waveguide modulators
Author :
Sato, K. ; Wakita, K. ; Yamamoto, M.
fDate :
3/26/1992 12:00:00 AM
Abstract :
The quantum-confined Stark effect in strained InGaAsP multiquantum wells with InGaAsP barriers and its application to the optical electroabsorption waveguide modulator are described. A large spectral red shift of more than 450 AA is observed at a low applied voltage of 3 V. An extinction ratio of >14 dB is demonstrated with a driving voltage as low as 5 V.
Keywords :
III-V semiconductors; Stark effect; electro-optical devices; electroabsorption; gallium arsenide; gallium compounds; indium compounds; integrated optics; optical modulation; optical waveguide components; semiconductor quantum wells; spectral line shift; driving voltage; extinction ratio; optical electroabsorption waveguide modulators; quantum-confined Stark effect; spectral red shift; strained InGaAsP multiquantum wells;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19920384
