• DocumentCode
    1089279
  • Title

    Improved noise model for MESFETs and HEMTs in lower gigahertz frequency range

  • Author

    Heymann, P. ; Prinzler, H.

  • Author_Institution
    Ferdinand Braun Inst. fur Hochstfrequenztech., Berlin, Germany
  • Volume
    28
  • Issue
    7
  • fYear
    1992
  • fDate
    3/26/1992 12:00:00 AM
  • Firstpage
    611
  • Lastpage
    612
  • Abstract
    A noise model based on an equivalent circuit is applied to an HEMT. Besides the frequency dependence of the most important noise parameters (Fmin, Ropt, Xopt, RN) two apparent experimental facts are explained: the limited Ropt, Xopt and the increase of RN with decreasing frequency.
  • Keywords
    Schottky gate field effect transistors; electron device noise; equivalent circuits; high electron mobility transistors; random noise; semiconductor device models; solid-state microwave devices; 1 to 22 GHz; 1/f noise; HEMT; MESFET; equivalent circuit; frequency dependence; gate leakage current; gate noise; lower gigahertz frequency range; noise model; shot noise;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19920385
  • Filename
    133022
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1089279