DocumentCode :
1089279
Title :
Improved noise model for MESFETs and HEMTs in lower gigahertz frequency range
Author :
Heymann, P. ; Prinzler, H.
Author_Institution :
Ferdinand Braun Inst. fur Hochstfrequenztech., Berlin, Germany
Volume :
28
Issue :
7
fYear :
1992
fDate :
3/26/1992 12:00:00 AM
Firstpage :
611
Lastpage :
612
Abstract :
A noise model based on an equivalent circuit is applied to an HEMT. Besides the frequency dependence of the most important noise parameters (Fmin, Ropt, Xopt, RN) two apparent experimental facts are explained: the limited Ropt, Xopt and the increase of RN with decreasing frequency.
Keywords :
Schottky gate field effect transistors; electron device noise; equivalent circuits; high electron mobility transistors; random noise; semiconductor device models; solid-state microwave devices; 1 to 22 GHz; 1/f noise; HEMT; MESFET; equivalent circuit; frequency dependence; gate leakage current; gate noise; lower gigahertz frequency range; noise model; shot noise;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19920385
Filename :
133022
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1089279
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