• DocumentCode
    1089285
  • Title

    Subthreshold current in oxide isolated structures

  • Author

    Sugino, M. ; Akers, L.A.

  • Author_Institution
    Semiconductor Research and Development Laboratory, Motorola, Phoenix, AZ
  • Volume
    4
  • Issue
    4
  • fYear
    1983
  • fDate
    4/1/1983 12:00:00 AM
  • Firstpage
    114
  • Lastpage
    115
  • Abstract
    The effects of the shape of the sidewall oxide isolation on threshold voltage and subthreshold current is discussed. The interface charge is found to significantly alter subthreshold current.
  • Keywords
    Laplace equations; MOS devices; MOSFET circuits; Mesh generation; Shape; Silicon; Subthreshold current; Threshold current; Threshold voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1983.25668
  • Filename
    1483412
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1089285