Title :
Subthreshold current in oxide isolated structures
Author :
Sugino, M. ; Akers, L.A.
Author_Institution :
Semiconductor Research and Development Laboratory, Motorola, Phoenix, AZ
fDate :
4/1/1983 12:00:00 AM
Abstract :
The effects of the shape of the sidewall oxide isolation on threshold voltage and subthreshold current is discussed. The interface charge is found to significantly alter subthreshold current.
Keywords :
Laplace equations; MOS devices; MOSFET circuits; Mesh generation; Shape; Silicon; Subthreshold current; Threshold current; Threshold voltage;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1983.25668
