Title :
Monolithic eight-channel photoreceiver array OEICs for HDWDM applications at 1.55 mu m
Author :
Lee, Woo Seung ; Spear, D.A.H. ; Smith, A.D. ; Wheeler, S.A. ; Bland, S.W.
Author_Institution :
BNR Eur. Ltd., Harlow, UK
fDate :
3/26/1992 12:00:00 AM
Abstract :
Eight-channel transimpedance photoreceiver array OEICs have been successfully fabricated on 2" diameter InP substrates. The yield of fully functional arrays is as high as 37%. Individual receiver channels exhibit bandwidths in excess of 300 MHz and an average input equivalent noise current of around 4.8 pA/ square root (Hz), corresponding to an inferred sensitivity of -32.1 dBm at 622 Mbit/s. Each receiver channel is designed to drive standard 50 Omega loads.
Keywords :
III-V semiconductors; frequency division multiplexing; gallium arsenide; indium compounds; integrated optoelectronics; optical communication equipment; receivers; 1.55 micron; 300 MHz; HDWDM applications; InGaAs-InP; InP substrate; bandwidths; high density wavelength division multiplexing; input equivalent noise current; monolithic eight channel photoreceiver array OEIC; receiver channels; sensitivity;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19920386
