• DocumentCode
    1089294
  • Title

    Monolithic eight-channel photoreceiver array OEICs for HDWDM applications at 1.55 mu m

  • Author

    Lee, Woo Seung ; Spear, D.A.H. ; Smith, A.D. ; Wheeler, S.A. ; Bland, S.W.

  • Author_Institution
    BNR Eur. Ltd., Harlow, UK
  • Volume
    28
  • Issue
    7
  • fYear
    1992
  • fDate
    3/26/1992 12:00:00 AM
  • Firstpage
    612
  • Lastpage
    614
  • Abstract
    Eight-channel transimpedance photoreceiver array OEICs have been successfully fabricated on 2" diameter InP substrates. The yield of fully functional arrays is as high as 37%. Individual receiver channels exhibit bandwidths in excess of 300 MHz and an average input equivalent noise current of around 4.8 pA/ square root (Hz), corresponding to an inferred sensitivity of -32.1 dBm at 622 Mbit/s. Each receiver channel is designed to drive standard 50 Omega loads.
  • Keywords
    III-V semiconductors; frequency division multiplexing; gallium arsenide; indium compounds; integrated optoelectronics; optical communication equipment; receivers; 1.55 micron; 300 MHz; HDWDM applications; InGaAs-InP; InP substrate; bandwidths; high density wavelength division multiplexing; input equivalent noise current; monolithic eight channel photoreceiver array OEIC; receiver channels; sensitivity;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19920386
  • Filename
    133023