DocumentCode
1089305
Title
Burnout studies of X-band radar negative resistance transistor low noise amplifiers
Author
Paul, D.K. ; Gardner, Peter
Author_Institution
Dept. of Electr. Eng. & Electron., Univ. of Manchester Inst. of Sci. & Technol., UK
Volume
28
Issue
7
fYear
1992
fDate
3/26/1992 12:00:00 AM
Firstpage
614
Lastpage
615
Abstract
GaAs FETs and HEMTs can be configured to give low noise, negative resistance microwave amplification. Such low noise amplifiers have the advantage of an inherent bypass path after device burnout. This feature is potentially useful in radar receiver applications. Test results for prototype LNAs are described, showing burnout energies comparable to those of conventional transmission mode amplifiers using similar devices. Bypass path losses after burnout are around 4 dB, approximately 20 dB less than for a failed transmission mode amplifier.
Keywords
field effect transistors; high electron mobility transistors; microwave amplifiers; negative resistance; radar receivers; semiconductor device testing; solid-state microwave circuits; solid-state microwave devices; FETs; GaAs; HEMTs; X-band radar negative resistance transistor low noise amplifiers; burnout energies; burnout testing; inherent bypass path; negative resistance microwave amplification; radar receiver applications;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19920387
Filename
133024
Link To Document