Title :
High-power and long-lifetime inGaN blue- violet laser diodes grown by molecular beam epitaxy
Author :
Tan, W.S. ; Kauer, M. ; Hooper, S.E. ; Barnes, J.M. ; Rossetti, M. ; Smeeton, T.M. ; Bousquet, V. ; Heffernan, J.
Author_Institution :
Sharp Labs. of Eur. Ltd., Oxford
Abstract :
InGaN 405 nm multiple quantum well laser diodes grown by molecular beam epitaxy (MBE) with a continuous-wave (CW) lifetime of up to 42 h are reported. The CW threshold current density of the ridge waveguide laser diodes is 3.6 kA/cm2 and the slope efficiency for uncoated facets is 0.42 W/A per facet with a maximum CW output power of 45 mW per facet. Statistical variation of CW lifetime with dissipated power is presented for MBE-grown laser diodes from five different wafers.
Keywords :
current density; gallium compounds; indium compounds; molecular beam epitaxial growth; ridge waveguides; semiconductor lasers; waveguide lasers; wide band gap semiconductors; InGaN; blue-violet laser diodes; continuous-wave lifetime; molecular beam epitaxy; ridge waveguide; slope efficiency; threshold current density;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20083456
