• DocumentCode
    1089321
  • Title

    Short-channel effects in 0.5-µm source-drain spaced vertical GaAs FET´s—A first experimental investigation

  • Author

    Kohn, E. ; Mishra, U. ; Eastman, L.F.

  • Author_Institution
    Domaine de Corbeville, Orsay, France
  • Volume
    4
  • Issue
    4
  • fYear
    1983
  • fDate
    4/1/1983 12:00:00 AM
  • Firstpage
    125
  • Lastpage
    127
  • Abstract
    The output characteristics of vertical GaAs MESFET´s with a 0.5 µm source-drain spacing are discussed. It is found that the measured pinch-off voltage is substantially larger than the one expected from the geometrical Schottky diode pinch-off, and current limiting surface depletion effects are not observed.
  • Keywords
    Current limiters; Current measurement; Doping; Electrodes; Electrons; FETs; Gallium arsenide; MESFETs; Schottky diodes; Voltage measurement;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1983.25672
  • Filename
    1483416
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1089321