DocumentCode :
1089333
Title :
Determination of source and drain parasitic resistances of HEMTs
Author :
Pouvil, P. ; Zemour, B. ; Pasquet, Daniel ; Gaubert, Jean
Author_Institution :
ENSEA, Cergy Pontoise, France
Volume :
28
Issue :
7
fYear :
1992
fDate :
3/26/1992 12:00:00 AM
Firstpage :
618
Lastpage :
620
Abstract :
A practical method to evaluate the parasitic source resistance Rs and drain resistance Rd of high electron mobility transistors (HEMTs) is presented. DC results for Rs and Rd can be used as initial values in the determination of linear and nonlinear equivalent circuits by optimisation.
Keywords :
electric resistance measurement; equivalent circuits; high electron mobility transistors; semiconductor device models; solid-state microwave devices; DC results; HEMTs; drain resistance; high electron mobility transistors; linear equivalent circuits; microwave performance; modelling; nonlinear equivalent circuits; optimisation; parasitic source resistance;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19920390
Filename :
133027
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1089333
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