Optimum design of n+-n-n+InP devices in the millimeter-range frequency limitation—RF performances

Systematic simulations of n⁺-n-n⁺InP millimeter-wave transferred-electron devices have been performed in order to define the frequency limitation of the fundamental accumulation transmit mode, as well as the maximum RF performance of these devices. The simulations indicate that the use of n⁺-n-n⁺InP devices yields significant net output powers and efficiencies up to 160 GHz, according to the present state of technology.