• DocumentCode
    1089389
  • Title

    Room temperature 632.7 nm CW operation of AlGaInP strained multiquantum well lasers grown on

  • Author

    Yoshida, Isao ; Katsuyama, Tomokazu ; Hashimoto, Jun ; Taniguchi, Yukinobu ; Hayashi, H.

  • Author_Institution
    Sumitomo Electr. Ind. Ltd., Yokohama, Japan
  • Volume
    28
  • Issue
    7
  • fYear
    1992
  • fDate
    3/26/1992 12:00:00 AM
  • Firstpage
    628
  • Lastpage
    629
  • Abstract
    Room temperature (25 degrees C) 632.7 nm continuous wave operation of AlGaInP strained multiquantum well lasers has been achieved on
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; gallium compounds; indium compounds; laser modes; semiconductor junction lasers; 25 degC; 5 to 38 degC; 632.7 nm; AlGaInP-GaAs; CW mode; GaAs; room temperature CW operation; strained multiquantum well lasers;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19920396
  • Filename
    133033
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1089389