Title :
Low-loss fibre-chip coupling by buried laterally tapered InP/InGaAsP waveguide structure
Author :
Zengerle, Roland ; Bruckner, H. ; Olzhausen, H. ; Kohl, A.
Author_Institution :
Forschungsinst. der Deutschen Bunderspost Telekom, Darmstadt, Germany
fDate :
3/26/1992 12:00:00 AM
Abstract :
A passive InP/InGaAsP spot-size transformer for low-loss coupling of semiconductor optoelectronic devices to single-mode fibres has been fabricated entirely on InP. Using a buried two-layer laterally tapered section, spot-size transformation is demonstrated from below 2 mu m up to 8 mu m, the spot size of a dispersion-shifted fibre at 1550 nm. For a chip without antireflection coating a total insertion loss of 2.7 dB was achieved at a taper length of approximately 600 mu m.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; integrated optics; optical couplers; optical losses; optical waveguides; 1550 nm; 2 to 8 micron; 2.7 dB; InP; InP-InGaAsP buried laterally tapered waveguide structure; low loss fibre chip coupling; passive spot size transformer; semiconductor optoelectronic devices; single-mode fibres; total insertion loss;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19920398
