• DocumentCode
    1089417
  • Title

    Interfacial electrical properties of ion-beam sputter deposited amorphous carbon on silicon

  • Author

    Khan, A.Azim ; Woollam, J.A. ; Chung, Y. ; Banks, B.

  • Author_Institution
    University of Nebraska, Lincoln, NE
  • Volume
    4
  • Issue
    5
  • fYear
    1983
  • fDate
    5/1/1983 12:00:00 AM
  • Firstpage
    146
  • Lastpage
    149
  • Abstract
    Amorphous, "diamond-like" Carbon films have been deposited on Si substrates, using ion-beam sputtering. The interfacial properties are studied using capacitance and conductance measurements. Data are analyzed using existing theories for interfacial electrical properties. The density of electronic states at the interface, along with corresponding time constants are determined, and the density of interface states is unusually low for an as yet unoptimized.
  • Keywords
    Amorphous materials; Capacitance measurement; Etching; Interface states; Ion beams; NASA; Optical films; Semiconductor films; Silicon; Sputtering;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1983.25682
  • Filename
    1483426
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1089417