DocumentCode :
1089503
Title :
Ballistic transport in GaAs
Author :
Williams, C.K. ; Glisson, T.H. ; Littlejohn, M. ; Hauser, J.R.
Author_Institution :
North Carolina State University, Raleigh, NC
Volume :
4
Issue :
6
fYear :
1983
fDate :
6/1/1983 12:00:00 AM
Firstpage :
161
Lastpage :
163
Abstract :
Ballistic transport in GaAs has been studied using an ensemble Monte Carlo simulation. Duration and spatial extent of ballistic transport for a hot electron distribution can be defined from such studies. Mean displacement of the ensemble increases quadratically with time for a specified interval. This observation provides a phenomenological definition of ensemble ballistic transport. This phenomenological definition is compared with a theoretical definition based on time at which a significant fraction of an ensemble have experienced at least one collision. From these studies, times and distances are given for which a single-particle ballistic equation and a Langevin equation accurately describe ensemble transport in GaAs.
Keywords :
Ballistic transport; Charge transfer; Effective mass; Electrons; Electrooptic effects; Equations; Gallium arsenide; Impurities; Kinetic energy; Photonic band gap;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/EDL.1983.25690
Filename :
1483434
Link To Document :
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