Title :
Flash-lamp annealing of ion-implanted silicon and its application to solar cells
Author :
Usami, A. ; Yoshida, N. ; Inoue, Y. ; Yoshida, Norihiro ; Inoue, Yasuyuki
Author_Institution :
Nagoya Institute of Technology, Nagoya, Japan
fDate :
6/1/1983 12:00:00 AM
Abstract :
Xe-lamps were used to anneal p+-implanted silicon. The redistribution of implanted dopants does not occur by flash annealing. The substrate-orientation dependence of electrical activity of implanted dopants between
Keywords :
Annealing; Conferences; Design optimization; Electron devices; Ion implantation; Lamps; Notice of Violation; Photovoltaic cells; Physics; Silicon;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1983.25692
