Title :
New type of silicon material with very high quality surface layer on insulating defect layer
Author :
Li, J.M. ; Chong, M. ; Zhu, Junan
Author_Institution :
Chinese Acad. of Sci., Beijing, China
fDate :
3/26/1992 12:00:00 AM
Abstract :
A new-type silicon material, silicon on defect layer (SODL) was proved to have a very high quality surface microstructure which is necessary for commercially feasible high-density very large scale integrated circuits (VLSI). The structure of the SODL material was viewed by transmission electron microscopy. The SODL material was also proved to have a buried defect layer with an insulating resistivity of 5.7*1010 Omega cm.
Keywords :
VLSI; elemental semiconductors; semiconductor technology; semiconductor-insulator boundaries; silicon; 5.7E10 ohmcm; SODL material; SOI; Si material; Si on defect layer; VLSI; buried defect layer; high quality surface layer; high quality surface microstructure; high-density very large scale integrated circuits; insulating defect layer; insulating resistivity; semiconductors; transmission electron microscopy;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19920412
