DocumentCode
1089589
Title
A novel gate—Cathode configuration with two interdigitation levels for GTO thyristors
Author
Silard, Andrei ; Rusu, Stephen
Author_Institution
Polytechnic Institute, Bucharest, Romania
Volume
4
Issue
6
fYear
1983
fDate
6/1/1983 12:00:00 AM
Firstpage
188
Lastpage
190
Abstract
A new gate-cathode concept leading to a substantial improvement of the main parameters of the gate turn-off (GTO) thyristors has been developed and successfully tested on medium power devices. The distinctive feature of the novel pattern with two interdigitation levels (TIL) consists in its unique ability to bring under designer´s control the processes of sweeping-out of the stored charge and of the anode current squeezing.
Keywords
Anodes; Cathodes; Electrothermal effects; Process control; Process design; Pulse measurements; Switches; Testing; Thyristors; Voltage;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/EDL.1983.25699
Filename
1483443
Link To Document