Title :
A new CMOS structure with vertical p-channel transistors
Author :
Yeh, W.C. ; Jaeger, R.C. ; Cook, K.B.
Author_Institution :
Auburn University, Auburn, AL
fDate :
6/1/1983 12:00:00 AM
Abstract :
A new structure is presented which uses vertical p-channel transistors to enhance the capability of CMOS technology. This structure gives improved circuit density over conventional planar CMOS with equivalent performance. Ring oscillators were used to evaluate the switching performance of the new CMOS structure and to compare it with planar CMOS.
Keywords :
CMOS logic circuits; CMOS technology; Epitaxial layers; Fabrication; Logic devices; MOS devices; MOSFETs; Ring oscillators; Silicon; Substrates;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1983.25702
