Title :
All-binary AlAs—GaAs laser diode
Author :
Laidig, W.D. ; Caldwell, P.J. ; Kim, K. ; Lee, J.W.
Author_Institution :
North Carolina State University, Raleigh, NC
fDate :
7/1/1983 12:00:00 AM
Abstract :
Thin layers of AlAs and GaAs, grown by molecular beam epitaxy (MBE), are used to simulate the properties of AlxGa1-xAs. These AlAs-GaAs superlattices (SL´s) are used as cladding layers (instead of AlxGa1-xAs) in heterostructure lasers capable of room-temperature operation. It is thus possible to obtain laser diodes which are composed only of the binary compounds GaAs and AlAs. The all-binary lasers are compared to conventional AlxGa1-xAs-GaAs double-heterostructure (DH) lasers grown and fabricated under similar conditions.
Keywords :
Annealing; Buffer layers; Diode lasers; Gallium arsenide; Lattices; Photoluminescence; Photonic band gap; Satellites; Superlattices; X-ray diffraction;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1983.25709
