• DocumentCode
    1089685
  • Title

    All-binary AlAs—GaAs laser diode

  • Author

    Laidig, W.D. ; Caldwell, P.J. ; Kim, K. ; Lee, J.W.

  • Author_Institution
    North Carolina State University, Raleigh, NC
  • Volume
    4
  • Issue
    7
  • fYear
    1983
  • fDate
    7/1/1983 12:00:00 AM
  • Firstpage
    212
  • Lastpage
    214
  • Abstract
    Thin layers of AlAs and GaAs, grown by molecular beam epitaxy (MBE), are used to simulate the properties of AlxGa1-xAs. These AlAs-GaAs superlattices (SL´s) are used as cladding layers (instead of AlxGa1-xAs) in heterostructure lasers capable of room-temperature operation. It is thus possible to obtain laser diodes which are composed only of the binary compounds GaAs and AlAs. The all-binary lasers are compared to conventional AlxGa1-xAs-GaAs double-heterostructure (DH) lasers grown and fabricated under similar conditions.
  • Keywords
    Annealing; Buffer layers; Diode lasers; Gallium arsenide; Lattices; Photoluminescence; Photonic band gap; Satellites; Superlattices; X-ray diffraction;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1983.25709
  • Filename
    1483453
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1089685