Title :
Low-Temperature Microwave Annealing for Tunnel Field-Effect Transistor
Author :
Yi-Ruei Jhan ; Yung-Chun Wu ; Yu-Long Wang ; Yao-Jen Lee ; Min-Feng Hung ; Hsin-Yi Lin ; Yu-Hsiang Chen ; Mu-Shih Yeh
Author_Institution :
Dept. of Eng. & Syst. Sci., Nat. Tsing Hua Univ., Hsinchu, Taiwan
Abstract :
Unlike the high-temperature activation of dopants, such as rapid thermal annealing (RTA), the activation of dopants by low-temperature microwave annealing (MWA) suppresses their diffusion, reducing screening tunneling length (λ). This letter compares low-temperature (490 °C) MWA with high-temperature (1050 °C) RTA of a fin-shaped polycrystalline silicon (Poly-Si) tunnel field-effect transistor (TFET). The band-to-band tunneling voltage (VBTBT) indicates clearly that TFET annealed by MWA had a lower λ than TFET that was annealed by RTA. The TFET that was annealed by MWA had a high ON/OFF current ratio of 108, a low subthreshold swing, and an almost negligible drain-induced barrier lowering.
Keywords :
field effect transistors; rapid thermal annealing; silicon; tunnel transistors; Si; band-to-band tunneling voltage; dopant activation; drain-induced barrier lowering; fin-shaped polycrystalline silicon; high-temperature RTA; low-temperature MWA; low-temperature microwave annealing; rapid thermal annealing; screening tunneling length; temperature 1050 C; temperature 490 C; tunnel field-effect transistor; Annealing; Logic gates; Microwave FETs; Silicon; Tunneling; Band-to-band tunneling (BTBT); Screening tunneling length (λ); Tunnel field-effect transistor (TFET); band-to-band tunneling (BTBT); microwave annealing (MWA); screening tunneling length ( $lambda $ );
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2014.2386213
