• DocumentCode
    1089744
  • Title

    Transient annealing of indium phosphide

  • Author

    Lile, D.L. ; Collins, D.A. ; Zeisse, C.R.

  • Author_Institution
    Naval Ocean Systems Center, San Diego, CA
  • Volume
    4
  • Issue
    7
  • fYear
    1983
  • fDate
    7/1/1983 12:00:00 AM
  • Firstpage
    231
  • Lastpage
    233
  • Abstract
    Thermal treatment of semiconductor samples in the range ∼ 650 to 900°C is an integral part of planar device processing for the activation of implanted ion species. This letter describes a rapid annealing procedure for the short-term treatment of such implants, which from data obtained on InP is seen to result in high activation efficiencies and mobilities ∼ 85 percent and 2600 cm2/V.s, respectively, while at the same time minimizing surface degradation and bulk impurity redistribution.
  • Keywords
    Annealing; Degradation; Electron beams; Furnaces; Implants; Indium phosphide; Ocean temperature; Optical pulse generation; Sea surface; Surface treatment;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1983.25715
  • Filename
    1483459
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1089744