Title :
High-speed GaAs switched current techniques for analogue sampled-data signal processing
Author :
Toumazou, Christofer ; Battersby, N.C.
Author_Institution :
Dept. of Electr. & Electron Eng., Imperial Coll. of Sci. & Technol. & Med., London, UK
fDate :
3/26/1992 12:00:00 AM
Abstract :
Some ideas for the realisation of switched current analogue sampled data techniques in gallium arsenide (GaAs) MESFET technology are presented. Encouraging simulation results of a 1 GHz clock rate damped integrator are presented.
Keywords :
III-V semiconductors; Schottky gate field effect transistors; analogue circuits; field effect integrated circuits; gallium arsenide; integrating circuits; linear integrated circuits; switched networks; 1 GHz; GaAs; MESFET technology; analogue sampled-data signal processing; damped integrator; high speed techniques; switched current techniques;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19920435
